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Product:
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Kingston Hyper-X KHX4000K2/1G DDR Memory Kit |
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Price:
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$412 (CAN) / $309 (U.S)
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Supplied By:
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Kingston Technology
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Author:
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Mantis
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Date:
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March 28th, 2003
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Rating:
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MODTHEBOX would like to thank Heather from Kingston Technology
for providing the Kingston Hyper-X KHX4000K2/1G DDR Memory Kit for review.
Introduction:
The combination of high performance computing and the art of overclocking to push components far beyond the manufactures
suggested specifications have provided great achievements for not only for hardware architecture over the last year but
enthusiasts as well. In order to meet the demanding market to supply quality products that will perform well beyond the
dwelling stock speeds and take advantage to the latest architecture, many manufactures have conformed and introduced a
variation of extreme performance solutions into their product line up. With a reputation for value ram, Kingston Technology
based out of Fountain Valley, California is the world's largest independent manufacturer of memory products for desktop
computers, notebooks, servers, workstations, laser printers, digital cameras and hand-held computers. Introduced last year,
the HyperX series of memory is Kingston Technologies offering designed for extreme performance and gaming. Today in MTB Labs,
we will be evaluating the Kingston HyperX KHX4000K2/1G Memory Kit.
Specifications:
The Kingston Hyper-X KHX4000K2/1G DDR Memory Kit is one of several memory module packages available on the Kingston Technology
website. Frequencies for the HyperX line range from PC2700 to PC4300 and are available in 512MB, 1GB and selective 2GB kits.
The Hyper-X KHX4000K2/1G kit has been designed specifically for dual channel architecture operation with a rated speed of DDR
500Mhz and a total capacity of (2X512MB) 1GB. Here are some specifications taken directly from the Kingston Technology website:
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Kingston Hyper-X KHX4000K2/1G DDR Memory Kit - Key Specifications:
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| Kingston Hyper-X KHX4000K2/1G DDR Memory Kit: Manufactured by Kingston Technology |
| Power Supply: Vdd: 2.6V ± 0.1V, Vddq: 2.6V ± 0.1V |
| Double-data-rate architecture; two data transfers per clock cycle |
| Bidirectional data strobe(DQS) |
| Differential clock inputs(CK and CK) |
| DLL aligns DQ and DQS transition with CK transition |
| Programmable Read latency 3 (clock) |
| Programmable Burst length (2, 4, 8) |
| Programmable Burst type (sequential & interleave) |
| Timing Reference: 3-4-4-8-1 at +2.6V |
| Edge aligned data output, center aligned data input |
| Serial presence detect with EEPROM |
| High Performance Heat Spreader |
| PCB : Height 1.200" (30.48mm), double sided component |
| Clock Cycle Time (tCK) 5ns (min.) / 10ns (max.) |
| Row Cycle Time (tRC) 55ns (min.) |
| Refresh Row Cycle Time (tRFC) 70ns (min.) |
| Row Active Time (tRAS) 40ns (min.) / 70,000ns (max.) |
| Power (IDD0) 4.368 W (operating per module) |
| UL Rating 94 V - 0 |
| Operating Temperature 0o C to 70o C |
| Storage Temperature -55o C to +150o C |
 
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Click image for larger view
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Click image for larger view
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The Kingston Hyper-X KHX4000K2/1G DDR Memory Kit arrived in plastic retail packaging. A transparent cover showcases
the modules along with a product model number and Kingston Technology branding label sleeve. Included in the package
are the Kingston Hyper-X KHX4000K2/1G DDR modules and a small printed manual that outlines the proper installation
procedure and warranty information
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Click image for larger view
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Click image for larger view
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Out of the packaging, my initial impressions of the Kingston Hyper-X KHX4000K2/1G DDR modules were very positive.
The Kingston Hyper-X KHX4000K2/1G DDR Memory Kit contains of two 512MB DDR500 CL3 SDRAM memory modules, for a total
combined kit capacity of 1GB. Each module consists of sixteen 32M x 8-bit (8M x 8-bit x 4 Bank) Hynix DDR500 SDRAM
IC’s. I was unable to attain the exact Hynix IC model number. The Kingston Hyper-X KHX4000K2/1G DDR modules are
designed for an operating frequency of PC 4000 or DDR 500 (250MHz) at 2.6V+ with conservative timings of 3-4-4-8-1.
The five-digit number represents the CAS Latency, RAS-to-CAS Delay, RAS Precharge Act-to-Precharge Delay and Command
Rate values respectively. Lowering the CAS latency will yield the largest performance increase yet plays a key role
with stability at high frequencies. The lax timings will strike most as a clear bottleneck yet the high speed of
250MHZ+ front side bus (synchronous) with the speed of most recent processors easily counter balances the lax
timings as a much more bandwidth can be communicated from the memory to the processor.
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